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The 19th International Symposium on Power Semiconductor Devices and Integrated Circuits (ISPSD'07)
will be the leading international forum in 2007 for presentation,
review and discussion of the latest advances and developments in electronic devices
and integrated circuits designed for energy transfer. ISPSD'07 will be held in beautiful
Jeju Island, Korea. Conference will cover the most recent advances in the following subject areas: |
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Materials and Processes : Crystal Growth, Doping, Lifetime Control, Passivation, Characterization, Si, GaAs, SiC, GaN, Diamond. |
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Semiconductor CAD/Simulation : Process, Device, & Circuit Simulation, Layout, Verification Tools, Device Physics, DeviceFailure Modes, Reliability. |
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Discrete Power Devices : Diodes, MOSFETS, BJTs, IGBTs, Thyristors, High Power Devices, Intelligent Devices, Pulse Power Devices, Novel Device Structures in Si, SiC, GaAs and Diamond. |
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High Voltage and Low Voltage Power ICs : Isolation Techniques, SOI, Circuit Design, Device Technology, Monolithic vs Hybrid. |
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RF and High Frequency Power Devices and Circuits : Devices for linear power amplification in the 1-10 GHz range in Si,GaAs, SiC, GaN and Diamond Devices for High Frequency Power Conversion. |
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Modules and Packaging : Novel Packaging Techniques, Stress and Thermal Simulation, Thermal Management, High Voltage and Power Dissipation Issues |
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Power Application : Automotive Electronics, Telecommunications, Display Drivers, Audio, Power Systems, Power Supply, EV, Traction, Elevators, Motor Control, Battery, Wind and Solar Systems, Power Factor Correction, EMC, Power Management. |
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 Important Deadlines |
· Final Deadline for Submission of the Summary : November 16, 2006
· Notice of Acceptance : December 26, 2006
· Deadline for Submission of the final manuscript : March 1, 2007
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